AMaSiS 2018 Workshop: Abstracts

Time and space adaptive multidimensional simulation

of thin-film organic devices

Carlo de Falco(1), Pasquale Africa(1), and Dario Natali(2,3)

(1) MOX - Modeling and Scientific Computing, Dipartimento di Matematica, Politecnico di Milano

(2) DEIB - Dipartimento di Elettronica, Informatica e Bioingegneria, Politecnico di Milano

(3) CNST - Center for Nano Science and Technology, IIT@PoliMI

The accurate knowledge of relevant physical parameters is crucial to determine the predictive accuracy of numerical models for organic semiconductor devices. We present a step-by-step procedure enabling to determine critical model parameters - such as the density of states width, the carrier mobility and the injection barrier - by fitting experimental data from a sequence of relatively simple measurements to 2D numerical simulations under different regimes. The current presentation extends the results of [3, 2] where 1D models were used both for transient simulation of Metal-Insulator-Semiconductor (MIS) capacitors and for the estimating the DC transfer characteristics of Organic Thin-Film Transistors in the linear regime. The newly developed 2D simulator allows to account in a more natural way for a set of inherently two-dimensional phenomena, such as: the non-planarity of the semiconductor/insulator interface (due to the solution processing of materials); parasitic capacitances due to coupling between metal layers; the boundary condition at the semiconductor/substrate interface; contact resistance due to current-crowding effects. In order to deal with the increased complexity of numerical simulations in the new 2D setting efficient numerical methods based on a suitable a-posteriori error estimator and adaptive mesh refinement have been implemented [1]. Our approach is tested on a benchmark semiconducting polymer: a very satisfactory fitting of experimental measurements is achieved and physically meaningful values for the extracted parameters are obtained, thus confirming the strategy effectiveness.

References

  • 1 Carlo de Falco, Pasquale Claudio Africa, Simona Perotto. Scalable recovery-based amr on quadtree meshes. Submitted.
  • 2 Pasquale Claudio Africa, Carlo de Falco, Francesco Maddalena, Mario Caironi, and Dario Natali. Simultaneous extraction of density of states width, carrier mobility and injection barriers in organic semiconductors. Scientific reports, 7(1):3803, 2017.
  • 3 Francesco Maddalena, Carlo de Falco, Mario Caironi, and Dario Natali. Assessing the width of gaussian density of states in organic semiconductors. Organic Electronics, 17:304–318, 2015.